【英文标准名称】:TestMethodforMeasuringSteady-StatePrimaryPhotocurrent
【原文标准名称】:测量稳态原始光电流的标准试验方法
【标准号】:ASTMF448-1999(2005)
【标准状态】:现行
【国别】:
【发布日期】:1999
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.11
【标准类型】:(TestMethod)
【标准水平】:()
【中文主题词】:隔离栅场;结栅场;原始光电流;热发光探测器;导电体;辐照度;效应半导体器件;热量计;电子元部件;放射性照射;器件;齐纳二极管;电流测量;晶体管;稳定;辐照;半导体;试验
【英文主题词】:hardnessassurance;ionizingradiation;photocurrent;primaryphotocurrent;semiconductortesting
【摘要】:Thesteady-statephotocurrentofasimplep-njunctiondiodeisadirectlymeasurablequantitythatcanbedirectlyrelatedtodeviceresponseoverawiderangeofionizingradiation.Formorecomplexdevicesthejunctionphotocurrentmaynotbedirectlyrelatedtodeviceresponse.ZenerDiode8212;Inthisdevice,theeffectofthephotocurrentontheZenervoltageratherthanthephotocurrentitselfisusuallymostimportant.ThedeviceismostappropriatelytestedwhilebiasedintheZenerregion.IntestingZenerdiodesorprecisionvoltageregulators,extraprecautionmustbetakentomakecertainthephotocurrentgeneratedinthedeviceduringirradiationsdoesnotcausethevoltageacrossthedevicetochangeduringthetest.BipolarTransistor8212;Asdevicegeometriesdictatethatphotocurrentfromthebase-collectorjunctionbemuchgreaterthancurrentfromthebase-emitterjunction,measurementsareusuallymadeonlyonthecollector-basejunctionwithemitteropen;however,sometimes,toobtaindataforcomputer-aidedcircuitanalysis,theemitter-basejunctionphotocurrentisalsomeasured.JunctionField-EffectDevice8212;Aproperphotocurrentmeasurementrequiresthatthesourcebeshorted(dc)tothedrainduringmeasurementofthegate-channelphotocurrent.Intetrode-connecteddevices,thetwogate-channeljunctionsshouldbemonitoredseparately.InsulatedGateField-EffectDevice8212;Inthistypeofdevice,thetruephotocurrentisbetweenthesubstrateandthechannel,source,anddrainregions.Acurrentwhichcangeneratevoltagethatwillturnonthedevicemaybemeasuredbythetechniqueusedhere,butitisduetoinducedconductivityinthegateinsulatorandthusisnotajunctionphotocurrent.1.1Thistestmethodcoversthemeasurementofsteady-stateprimaryphotocurrent,Ipp,generatedinsemiconductordeviceswhenthesedevicesareexposdtoionizingradiation.Theseproceduresareintendedforthemeasurementofphotocurrentsgreaterthan10-9A-s/Gy(SiorGe),incasesforwhichtherelaxationtimeofthedevicebeingmeasuredislessthan25%ofthepulsewidthoftheionizingsource.Thevalidityoftheseproceduresforionizingdoseratesasgreatas108Gy(SiorGe)/shasbeenestablished.Theproceduresmaybeusedformeasurementsatdoseratesasgreatas1010Gy(SiorGe)/s;however,extracaremustbetaken.Above108Gy/sthepackageresponsemaydominatethedeviceresponsefortechnologiessuchascomplementarymetal-oxidesemiconductor,(CMOS)/silicon-onsapphire(SOS).Additionalprecautionsarealsorequiredwhenmeasuringphotocurrentsof10-9A-s/Gy(SiorGe)orlower.1.2Setup,calibration,andtestcircuitevaluationproceduresarealsoincludedinthistestmethod.1.3Becauseofthevariabilitybetweendevicetypesandintherequirementsofdifferentapplications,thedoseraterangeoverwhichanyspecifictestistobeconductedisnotgiveninthistestmethodbutmustbespecifiedseparately.1.4ThevaluesstateinInternationalSystemofUnits(SI)aretoberegardedasthestandard.Nootherunitsofmeasurementareincludedinthisstandard.1.5Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappropriatesafetyandhealthpracticesanddeterminetheapplicabilityofregulatorylimitationspriortouse.
【中国标准分类号】:A60
【国际标准分类号】:31_260
【页数】:7P.;A4
【正文语种】: